반도체 소자 제조 방법

Fabrication method of semiconductor device

Abstract

PURPOSE: A method for manufacturing a semiconductor device is provided to prevent the delamination of a metal line due to the movement of fluorine elements by forming an oxide and nitride layer on the upper and lower surface of a fluorine containing oxide layer without directly connecting between the metal line and the fluorine containing oxide layer. CONSTITUTION: After sequentially forming a lower oxide layer(12) and a metal line layer, a metal line(13) is formed by patterning the metal line layer. The first silicon nitride layer(14) is formed on the entire surface of the resultant structure. Then, the first oxide layer(15) is formed on the first silicon nitride layer(14). After depositing an oxide layer(16) containing fluorine elements on the resultant structure at a predetermined thickness, the second oxide layer(17) and the second silicon nitride layer(18) are sequentially formed on the oxide layer(16). Then, an upper oxide layer(19) is formed on the second silicon nitride layer(18).
반도체 소자 제조 방법에 관한 것으로, 그 목적은 금속 배선이 들뜨는 현상인 디라미네이션을 방지하는 데 있다. 이를 위하여, 본 발명에서는 금속 배선층 상에 불소 함유 산화막을 형성할 때, 불소 함유 산화막의 하부 및 상부에 산화막층 및 질화막층 중의 어느 한 층 이상을 형성함으로써, 불소의 이동을 억제한다.

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